Principal Engineer – Dry Etch NAND Process Pathfinding

About the role

Micron’s Advanced NAND Process Pathfinding team is seeking a Principal Engineer (Member of Technical Staff) to lead dry‑etch development for next‑generation NAND memory. You will design and implement plasma etch solutions that enable future scaling, novel device architectures, and high‑performance memory products.

Key responsibilities

• Develop and optimize dry‑etch processes to meet roadmap targets for structure, performance, and yield.
• Drive creation of high‑aspect‑ratio patterning, selective etch, profile control, and critical dimension management.
• Assess new plasma chemistries, equipment, and hardware for future device scaling.
• Collaborate with Process Integration, Thin Films, Wet Etch, Diffusion, Lithography, CMP, Device and other cross‑functional teams.
• Leverage AI‑enabled tools, advanced analytics, and digital workflows to accelerate development and improve knowledge management.

Required profile

• PhD or MS with 7–10+ years of experience in dry‑etch or semiconductor process development.
• Extensive experience with ICP/CCP plasma etch systems and advanced semiconductor processes.
• Proven technical leadership and ability to work with equipment and material suppliers.

Required skills

• ICP/CCP plasma etch expertise
• Plasma‑surface interactions and etch chemistry
• Profile control and high‑aspect‑ratio etching
• Plasma physics, transport phenomena, materials interactions
• AI/ML, statistical modeling, data analytics
• Digital engineering methodologies and workflow automation