Intern - NAND Product Development Engineer (AI Agent Project)
micron · Fab 10N/X
Job description
About the role
Micron is looking for an intern in its NAND Product Development Engineering department in Singapore to work on an AI-enabled project for NAND product development. Under mentor guidance, the intern builds an AI agent that identifies project risks, recommends mitigation actions and integrates with AI tools and engineering workflows. The internship runs for 5 months, from January to May 2027.
Key responsibilities
- Study selected NAND product-development and project-execution workflows.
- Design and develop AI applications, intelligent agents or automated workflows.
- Apply large language models, agentic AI frameworks, AI-assisted development tools and data analytics techniques.
- Prototype and evaluate solutions for risk identification, mitigation planning, engineering productivity and decision-making.
- Collaborate with Product Development Engineers and stakeholders to validate requirements and results.
- Deliver a functional AI agent prototype, integration with selected AI tools or workflows, an evaluation of accuracy, usability and productivity impact, and technical documentation of the methodology, results, limitations and recommendations.
Required profile
- Pursuing a degree or equivalent in Electrical Engineering, Computer Engineering, Computer Science, Artificial Intelligence, Data Science or a related technical field.
- Ability to collaborate with stakeholders, learn independently and work in an inclusive environment.
- Strong analytical, problem-solving, written and verbal communication skills.
Required skills
- Knowledge of AI, generative AI, large language models, data analytics or software development.
- Familiarity with programming, AI-assisted development tools or agentic AI frameworks is advantageous.
Interns may be considered for future full-time employment depending on business needs, role availability, academic completion and the recruitment process.
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Published 10 hours ago
Expires 1 month from now
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micron
Fab 10N/X
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