Distinguished Member of Technical Staff, NAND Advanced Thin Films Process Development

About the role

Micron Technology is hiring a Distinguished Member of Technical Staff (DMTS) for its NAND Advanced Thin Films Process Development team. The DMTS is a recognized expert who shapes the technical vision for NAND structural and electrical film processes, leads programs across the engineering group, mentors senior technical leaders and influences industry-wide and cross-disciplinary teams.

Key responsibilities

• Shape the technical vision for structural and electrical film processes and own the process technology roadmap aligned with business objectives and competitive benchmarks.
• Lead programs spanning the engineering group and drive breakthrough innovations in process development.
• Solve the most challenging technical problems, guiding teams in root cause analysis and resolution.
• Represent Micron at industry consortia, technical conferences and collaborative research initiatives, and initiate collaborations with external partners, universities and research institutes.
• Advocate strategies for cost savings, process efficiency and large-scale yield enhancement.
• Prepare and deliver technical presentations, white papers and patent filings, and assess technical risks to guide process development priorities and technology investments.

Required profile

• PhD or equivalent in Materials Science, Chemical Engineering, Physics, Chemistry, Electrical Engineering or a related field.
• Over 20 years of experience in thin film research and development for NAND, specifically diffusion, CVD, dielectric and carbon-based films.
• Industry recognition such as patents, publications, invited talks and leadership roles in technical committees or consortia.

Required skills

• Mastery of ALD and CVD (plasma and thermal) processes and new deposition methods, materials and integration strategies for NAND scaling.
• Reliability modeling, process-device correlation and failure analysis across multiple technology generations.
• Electrical evaluation (leakage, breakdown, capacitance, impedance) and metrology including atom probe tomography, in-line defect mapping and SPC.
• Advanced characterization: SIMS, XPS, TEM, EELS, APT and ML-assisted image analysis for HAR structures.
• Development of disruptive chemistries, materials and hardware solutions for next-generation NAND.