Member of Technical Staff (MTS) – 3D NAND Process Integration

About the role

Micron is hiring a Member of Technical Staff (MTS) for 3D NAND process integration at its Fab 10N/X site in Singapore. The role drives advanced 3D NAND technology pathfinding and process integration within the Advanced NAND Technology team, translating device concepts, materials and process architecture into validated, manufacturable solutions. It coordinates end-to-end development from concept through validation, using data-driven, AI-assisted and model-based methods to solve complex scaling challenges, and works with Device, Probe, Test, Design and Operations teams.

Key responsibilities

• Lead 3D NAND integration, pathfinding and advanced architecture enablement in support of the technology roadmap.
• Drive end-to-end technology development from concept through validation, including learning vehicles, characterization and technical debugging.
• Resolve complex integration and scaling challenges with structured experimentation, data analysis, AI-assisted insights and model-based methods.
• Define and optimize module and process architecture, including electrical targets, process flows and design rules.
• Collaborate with Device, Probe, Test, Design and Operations teams to drive performance, yield learning and execution.
• Promote technical innovation through process improvements, invention disclosures, patents and publications where applicable.
• Build global technical networks and share technical findings, risks and recommendations with stakeholders.
• Maintain experimental records, technical documentation and knowledge-sharing materials.
• Apply AI-enabled data analytics and model-driven methods to analyze complex datasets and speed up learning cycles, while complying with organizational standards and legal requirements.

Required profile

• Master's or PhD in Electrical Engineering, Materials Science, Physics, Chemical Engineering or a related field.
• Relevant experience in semiconductor device physics and process integration, with exposure to memory, CMOS/logic or emerging/embedded memory technologies.
• Experience requirements and job level must be validated before posting.
• Preferred: experience in 3D NAND integration, advanced architecture pathfinding or future-node technology development, and contributions to patents, publications or process improvements.

Required skills

• Strong foundation in semiconductor device physics, process integration and process architecture.
• Experience with experiment design, characterization, data analysis and structured technical problem-solving.
• Ability to link electrical targets, process flows, design rules, materials and device concepts to technology outcomes.
• Experience applying advanced data analytics, AI/ML techniques or model-based methods to engineering datasets.
• Clear technical communication, collaboration across cross-functional R&D teams, stakeholder influence and disciplined execution.