Member of Technical Staff (MTS) - Process Development, WET, NAND

About the role

Micron is hiring a Member of Technical Staff (MTS) for its Fab 10N/X facility, focused on wet process development for NAND memory. The MTS is a senior technical contributor who drives wet process development through complex experimentation, material and chemical characterization and integration fixing, helps establish process technology roadmaps and delivers silicon-based solutions for future memory needs. The role also involves mentoring early-career engineers.

Key responsibilities

• Lead project-level initiatives focused on developing wet processes.
• Carry out complex experiments and support process integration under the guidance of senior staff.
• Facilitate technology transfer and ramp-up, maintain accurate records and prepare technical reports.
• Mentor early-career staff, take part in multi-functional problem solving and drive continuous improvement and optimization.
• Contribute to documentation of guidelines and SOPs and knowledge management, and stay current on emerging technologies and wet-processing advancements.
• Use AI-assisted tools and insights to improve efficiency, quality or effectiveness, in line with organizational standards and legal requirements.

Required profile

• PhD with at least 8 years, or Master's with at least 11 years, or Bachelor's with at least 13 years of relevant experience in Electrical Engineering, Materials Science, Chemical Engineering, Physics or a related field.
• Deep understanding of vapor etch, wet strip, dry strip and selective chemical etching, with experience fixing process issues and supporting R&D to manufacturing transfer.
• Strong record of technical contributions, publications or patents is highly preferable.

Required skills

• Familiarity with electrical evaluation methods and fab metrology tools such as CD-SEM, thickness measurement and particle counters.
• DOE / SPC and data analysis systems (e.g. Y3) to analyze experimental outcomes.
• Working knowledge of memory process flow in planar and vertical NAND context.