Senior/Distinguished Member of Technical Staff, Photolithography, NAND

About the role

Micron is hiring a Senior/Distinguished Member of Technical Staff for its Process Development group, focused on photolithography for NAND memory. The role sits within the Technical Leadership Program (TLP), a career path for people who advance the company and the industry through technical excellence, innovation, influence and mentorship. TLP members set technical direction, lead through influence and develop the next generation of technical leaders.

Key responsibilities

• Define and lead pathfinding photolithography projects for future technology nodes and novel memory architectures.
• Establish long-term photolithography technology vision and roadmaps aligned with device scaling, yield, cost and manufacturability.
• Drive early development and de-risking of disruptive lithography solutions, including materials, processes, equipment and patterning schemes.
• Serve as a recognized technical authority influencing technology decisions across R&D, integration and manufacturing.
• Lead cross-functional and cross-site initiatives and partner with suppliers to co-innovate tools, materials and metrology.
• Oversee advanced process development including imaging, overlay, OPC, process window optimization and advanced process control.
• Generate and steward intellectual property such as patents, publications and internal technical standards.
• Mentor engineers as part of the Technical Leadership Program.

Required profile

• Ph.D. (preferred) or M.S. in Electrical Engineering, Materials Science, Physics, Chemical Engineering or a related field.
• At least 15 years of experience in semiconductor photolithography advanced process development.
• Proven record of leading high-impact technology programs from concept through development and transfer.
• Demonstrated ability to influence technical direction at organizational or enterprise level.

Required skills

• Advanced imaging physics, including immersion lithography, polarized illumination, low-k1 imaging and pattern fidelity.
• Lithography simulation, materials characterization and statistical analysis.
• Preferred: hands-on experience with EUV and advanced DUV lithography (365nm, 248nm, 193nm) and a history of pathfinding leadership for new nodes.