Intern - F10 CVD PEE: Crater Defect Reduction in TEOS CVD

About the role

Micron is offering an internship in its Thin Films Process Engineering (Chemical Vapor Deposition) team at Fab 10N/X, focused on reducing crater defects in the Tetraethyl Orthosilicate (TEOS) CVD process. The project builds a structured understanding of crater defect mechanisms by combining process knowledge, chamber condition review and manufacturing data analytics, applying data-driven methods and controlled experimentation to identify defect contributors and improvement opportunities.

Key responsibilities

• Study the TEOS CVD process flow, equipment configuration and chamber condition history
• Analyze inline defect inspection and yield data to characterize crater defect patterns
• Identify process and equipment variables correlated with defects through structured data analysis
• Run limited, well-defined experiments (DOE or split runs) under Process Engineering Excellence (PEE) guidance
• Evaluate defect reduction opportunities against key film performance metrics such as thickness, uniformity and electrical properties
• Produce a defect characterization summary, an analysis package linking process parameters and chamber conditions to defect behavior, experimental results showing improvement opportunities, and a final technical presentation and written summary

Required profile

• Degree in Chemical Engineering, Materials Science, Electrical Engineering, Mechanical Engineering, Data Analytics or a related engineering discipline
• Duration: minimum 6 months (semester internship from July 2026 to December 2026)
• Interest in semiconductor manufacturing and willingness to learn the processes

Required skills

• Data analysis and basic statistical analysis
• Structured problem-solving and ability to work with large datasets
• Clear written and verbal technical communication