NAND Cell Device Engineer

About the role

Micron is hiring a NAND Cell Device Engineer to work at the forefront of advanced 3D NAND development, characterizing, understanding and optimizing next-generation memory cells. The engineer collaborates with device, process integration, design, product and reliability teams to solve complex technical challenges and shape future NAND technology. Scope and level of responsibility align with experience, welcoming both high-potential engineers and established experts.

Key responsibilities

• Characterize advanced NAND memory cells and arrays to find opportunities for performance, reliability and scaling improvements.
• Build deep expertise in NAND device physics, array operation and failure mechanisms to guide future technology development.
• Analyze large-scale electrical test data to uncover device behaviors, qualification gaps and screening opportunities.
• Apply AI-assisted and agentic AI workflows to speed up data analysis, automate characterization and generate engineering insights.
• Contribute to NAND cell architecture and process development through innovative device solutions.
• Work closely with process integration, design, product engineering, reliability and manufacturing teams.

Required profile

• M.S. or Ph.D. in Electrical Engineering, Physics, Materials Science or a related field.
• Strong foundation in semiconductor device physics and fabrication processes.
• Demonstrated hands-on experience using AI-powered tools such as LLMs, generative AI assistants and AI code-assist platforms to improve engineering productivity.
• Experience in NAND Flash or other non-volatile memory technologies, including device physics, reliability and characterization, is a plus.
• Excellent communication and collaboration skills across diverse technical teams.

Required skills

• Statistical analysis and numerical computing software (MATLAB, Octave, JMP)
• AI-assisted data analysis and characterization workflows